subject predicate object context
43426 Creator c3baa1aae2495d9fcf383c433b46bfe0
43426 Creator ext-684eda46eb6d4443c56074895dda921c
43426 Creator ext-88c5afd0cd72001a894f7e2f3c53bff9
43426 Creator ext-183d2a5a05dd51e0b018b67bd94b9aff
43426 Creator ext-26b9fbb87e405d7a3b69f8e1bd6da539
43426 Creator ext-089539debf624e7f80e288bed3c9bdab
43426 Creator ext-6974235ca4ab63bad3d7b1c7c43b3f68
43426 Creator ext-9ee72f5bfc496b1352df928b9196d602
43426 Date 2008-09-07
43426 Is Part Of repository
43426 abstract The focussed ion beam mill rate of ALD AlOx has been measured and found to be 0.147µm3/nC. Standard FIB milling of the AlOx is conjectured to result in re-deposition of the AlOx material on the milled surfaces hindering the subsequent DRIE etching of the underlying silicon. The use of the enhanced etch gas iodine in the FIB system has been shown to remove this re-deposition and allows the subsequent etch to progress unhindered. Optimisation of the mill gas pressure and beam current density has also been shown to be essential for consistent pattern transfer into the underlying silicon.
43426 authorList authors
43426 presentedAt ext-c2cd5dadda2ea8b17d83a68fc5ae307f
43426 status nonPeerReviewed
43426 type AcademicArticle
43426 type Article
43426 label Anthony, Carl J.; Bowen, James ; Puurunen, R. L.; Dekker, J.; Prewett, Philip D.; Ward, Michael C. L.; Teng, Jason and Carter, Emma L. (2008). FIB direct write of ALD Al2O3 mask for silicon DRIE. In: 22nd International Conference Eurosensors, 7-10 Sep 2008, Dresden, Germany.
43426 label Anthony, Carl J.; Bowen, James ; Puurunen, R. L.; Dekker, J.; Prewett, Philip D.; Ward, Michael C. L.; Teng, Jason and Carter, Emma L. (2008). FIB direct write of ALD Al2O3 mask for silicon DRIE. In: 22nd International Conference Eurosensors, 7-10 Sep 2008, Dresden, Germany.
43426 Title FIB direct write of ALD Al<sub>2</sub>O<sub>3</sub> mask for silicon DRIE
43426 in dataset oro