43425 |
Creator |
c3baa1aae2495d9fcf383c433b46bfe0 |
43425 |
Creator |
ext-fda1c3acad899e3cfaa919b70abdcf52 |
43425 |
Creator |
ext-6719f52a1d34041e285619a59223301f |
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Date |
2009-03-15 |
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Is Part Of |
repository |
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abstract |
We report here the synthesis of silicon doped zinc oxide (2 wt.% SiO<sub>2</sub>-ZnO)
thin films by Pulsed Laser Deposition (PLD) with comparable electrical and optical
properties to Indium Tin Oxide (ITO). ZnO is a candidate for electrode in flat panel
displays including organic light-emitting diodes and windows in solar cells due to
its combined properties. Unlike the more commonly used ITO, ZnO is non-toxic, inexpensive
and abundant. The optimised film, deposited at 300˚C and an oxygen pressure of 5 mTorr,
had a resistivity of 4.6 ×10-4 Ωcm and a transmittance of 92%. |
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authorList |
authors |
43425 |
presentedAt |
ext-d6b9a7b28c2ce97f5258edefa6b6716f |
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status |
nonPeerReviewed |
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type |
AcademicArticle |
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type |
Article |
43425 |
label |
Fereshteh-Saniee, Nessa; Abell, J. Stuart and Bowen, James (2009). Structural, electrical
and optical properties of Si-doped ZnO thin films grown by pulsed laser deposition.
In: First International Conference on Multifunctional, Hybrid and Nanomaterials, 15-19
Mar 2009, Tours, France. |
43425 |
label |
Fereshteh-Saniee, Nessa; Abell, J. Stuart and Bowen, James (2009). Structural,
electrical and optical properties of Si-doped ZnO thin films grown by pulsed laser
deposition. In: First International Conference on Multifunctional, Hybrid and Nanomaterials,
15-19 Mar 2009, Tours, France. |
43425 |
Title |
Structural, electrical and optical properties of Si-doped ZnO thin films grown by
pulsed laser deposition |
43425 |
in dataset |
oro |