subject predicate object context
43425 Creator c3baa1aae2495d9fcf383c433b46bfe0
43425 Creator ext-fda1c3acad899e3cfaa919b70abdcf52
43425 Creator ext-6719f52a1d34041e285619a59223301f
43425 Date 2009-03-15
43425 Is Part Of repository
43425 abstract We report here the synthesis of silicon doped zinc oxide (2 wt.% SiO<sub>2</sub>-ZnO) thin films by Pulsed Laser Deposition (PLD) with comparable electrical and optical properties to Indium Tin Oxide (ITO). ZnO is a candidate for electrode in flat panel displays including organic light-emitting diodes and windows in solar cells due to its combined properties. Unlike the more commonly used ITO, ZnO is non-toxic, inexpensive and abundant. The optimised film, deposited at 300˚C and an oxygen pressure of 5 mTorr, had a resistivity of 4.6 ×10-4 Ωcm and a transmittance of 92%.
43425 authorList authors
43425 presentedAt ext-d6b9a7b28c2ce97f5258edefa6b6716f
43425 status nonPeerReviewed
43425 type AcademicArticle
43425 type Article
43425 label Fereshteh-Saniee, Nessa; Abell, J. Stuart and Bowen, James (2009). Structural, electrical and optical properties of Si-doped ZnO thin films grown by pulsed laser deposition. In: First International Conference on Multifunctional, Hybrid and Nanomaterials, 15-19 Mar 2009, Tours, France.
43425 label Fereshteh-Saniee, Nessa; Abell, J. Stuart and Bowen, James (2009). Structural, electrical and optical properties of Si-doped ZnO thin films grown by pulsed laser deposition. In: First International Conference on Multifunctional, Hybrid and Nanomaterials, 15-19 Mar 2009, Tours, France.
43425 Title Structural, electrical and optical properties of Si-doped ZnO thin films grown by pulsed laser deposition
43425 in dataset oro