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Creator |
d5b290714bde6848e3f3a094c6d1d3be |
| 46940 |
Creator |
b38b3c7f3242b32406b88954726ebff8 |
| 46940 |
Creator |
e4a5ce7f5a3d131eba01f5aeb1bfb354 |
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Date |
2016-07-27 |
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Is Part Of |
repository |
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Is Part Of |
p0277786X |
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abstract |
We are presenting a novel concept for a fully depleted, monolithic, pinned photodiode
CMOS image sensor using reverse substrate bias. The principle of operation allows
the manufacture of backside illuminated CMOS sensors with active thickness in excess
of 100 µm. This helps increase the QE at near-IR and soft X-ray wavelengths, while
preserving the excellent characteristics associated with the pinned photodiode sensitive
elements. Such sensors are relevant to a wide range of applications, including scientific
imaging, astronomy, Earth observation and surveillance.
A prototype device with 10 µm and 5.4 µm pixels using this concept has been designed
and is being manufactured on a 0.18 µm CMOS image sensor process. Only one additional
implantation step has been introduced to the normal manufacturing flow to make this
device. The paper discusses the design of the sensor and the challenges that had to
be overcome to realise it in practice, and in particular the method of achieving full
depletion without parasitic substrate currents. It is expected that this new technology
can be competitive with modern backside illuminated thick CCDs for use at visible
to near-IR telescopes and synchrotron light sources. |
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authorList |
authors |
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editorList |
editors |
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presentedAt |
ext-5ad05012962aac530718c42f08fed5d3 |
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status |
peerReviewed |
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uri |
http://data.open.ac.uk/oro/document/485819 |
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uri |
http://data.open.ac.uk/oro/document/485820 |
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uri |
http://data.open.ac.uk/oro/document/485821 |
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uri |
http://data.open.ac.uk/oro/document/485822 |
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uri |
http://data.open.ac.uk/oro/document/485823 |
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uri |
http://data.open.ac.uk/oro/document/485824 |
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uri |
http://data.open.ac.uk/oro/document/487405 |
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volume |
9915 |
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type |
AcademicArticle |
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type |
Article |
| 46940 |
label |
Stefanov, Konstantin D. ; Clarke, Andrew S. and Holland, Andrew D. (2016). Fully
depleted and backside biased monolithic CMOS image sensor. In: High Energy, Optical,
and Infrared Detectors for Astronomy VII (Holland, Andrew D. and Beletic, James eds.),
p. 991513. |
| 46940 |
label |
Stefanov, Konstantin D. ; Clarke, Andrew S. and Holland, Andrew D. (2016). Fully
depleted and backside biased monolithic CMOS image sensor. In: High Energy, Optical,
and Infrared Detectors for Astronomy VII (Holland, Andrew D. and Beletic, James eds.),
p. 991513. |
| 46940 |
Title |
Fully depleted and backside biased monolithic CMOS image sensor |
| 46940 |
in dataset |
oro |