| 43217 |
Creator |
d5b290714bde6848e3f3a094c6d1d3be |
| 43217 |
Creator |
b38b3c7f3242b32406b88954726ebff8 |
| 43217 |
Creator |
e4a5ce7f5a3d131eba01f5aeb1bfb354 |
| 43217 |
Creator |
c42273d918cbe0b863f957bf258dbd2c |
| 43217 |
Date |
2015-04-30 |
| 43217 |
Is Part Of |
p17480221 |
| 43217 |
Is Part Of |
repository |
| 43217 |
abstract |
The Centre for Electronic Imaging (CEI) has an active programme of evaluating and
designing Complementary Metal-Oxide Semiconductor (CMOS) image sensors with high quantum
efficiency, for applications in near-infrared and X-ray photon detection.
This paper describes the performance characterisation of CMOS devices made on a high
resistivity 50 μm thick p-type substrate with a particular focus on determining the
depletion depth and the quantum efficiency. The test devices contain 8x8 pixel arrays
using CCD-style charge collection, which are manufactured in a low voltage CMOS process
by ESPROS Photonics Corporation (EPC).
Measurements include determining under which operating conditions the devices become
fully depleted. By projecting a spot using a microscope optic and a LED and biasing
the devices over a range of voltages, the depletion depth will change, causing the
amount of charge collected in the projected spot to change. We determine if the device
is fully depleted by measuring the signal collected from the projected spot. The analysis
of spot size and shape is still under development. |
| 43217 |
authorList |
authors |
| 43217 |
issue |
4 |
| 43217 |
status |
peerReviewed |
| 43217 |
uri |
http://data.open.ac.uk/oro/document/313611 |
| 43217 |
uri |
http://data.open.ac.uk/oro/document/313613 |
| 43217 |
uri |
http://data.open.ac.uk/oro/document/313614 |
| 43217 |
uri |
http://data.open.ac.uk/oro/document/313615 |
| 43217 |
uri |
http://data.open.ac.uk/oro/document/313616 |
| 43217 |
uri |
http://data.open.ac.uk/oro/document/313617 |
| 43217 |
uri |
http://data.open.ac.uk/oro/document/315272 |
| 43217 |
volume |
10 |
| 43217 |
type |
AcademicArticle |
| 43217 |
type |
Article |
| 43217 |
label |
Clarke, A. ; Stefanov, K. ; Johnston, N. and Holland, A. (2015). Fully depleted,
thick, monolithic CMOS pixels with high quantum efficiency. Journal of Instrumentation,
10(4), article no. T04005. |
| 43217 |
label |
Clarke, A. ; Stefanov, K. ; Johnston, N. and Holland, A. (2015). Fully depleted,
thick, monolithic CMOS pixels with high quantum efficiency. Journal of Instrumentation,
10(4), article no. T04005. |
| 43217 |
Title |
Fully depleted, thick, monolithic CMOS pixels with high quantum efficiency |
| 43217 |
in dataset |
oro |