| 41857 |
Creator |
34febcce75601adaf767d5beba5f15b0 |
| 41857 |
Creator |
d5b290714bde6848e3f3a094c6d1d3be |
| 41857 |
Creator |
e4a5ce7f5a3d131eba01f5aeb1bfb354 |
| 41857 |
Creator |
de0a03d78c8437fcbaddbd7d4982f5f0 |
| 41857 |
Date |
2014-07-23 |
| 41857 |
Is Part Of |
repository |
| 41857 |
Is Part Of |
p0277786X |
| 41857 |
abstract |
Pixellated monolithic silicon detectors operated in a photon-counting regime are useful
in spectroscopic imaging applications. Since a high energy incident photon may produce
many excess free carriers upon absorption, both energy and spatial information can
be recovered by resolving each interaction event. The performance of these devices
in terms of both the energy and spatial resolution is in large part determined by
the amount of diffusion which occurs during the collection of the charge cloud by
the pixels. Past efforts to predict the X-ray performance of imaging sensors have
used either analytical solutions to the diffusion equation or simplified monte carlo
electron transport models. These methods are computationally attractive and highly
useful but may be complemented using more physically detailed models based on TCAD
simulations of the devices. Here we present initial results from a model which employs
a full transient numerical solution of the classical semiconductor equations to model
charge collection in device pixels under stimulation from initially Gaussian photogenerated
charge clouds, using commercial TCAD software. Realistic device geometries and doping
are included. By mapping the pixel response to different initial interaction positions
and charge cloud sizes, the charge splitting behaviour of the model sensor under various
illuminations and operating conditions is investigated. Experimental validation of
the model is presented from an e2v CCD30-11 device under varying substrate bias, illuminated
using an Fe-55 source. |
| 41857 |
authorList |
authors |
| 41857 |
presentedAt |
ext-0fd37b4a21c00378dc7a58d48ca38a7b |
| 41857 |
status |
nonPeerReviewed |
| 41857 |
uri |
http://data.open.ac.uk/oro/document/281495 |
| 41857 |
uri |
http://data.open.ac.uk/oro/document/281497 |
| 41857 |
uri |
http://data.open.ac.uk/oro/document/281498 |
| 41857 |
uri |
http://data.open.ac.uk/oro/document/281499 |
| 41857 |
uri |
http://data.open.ac.uk/oro/document/281500 |
| 41857 |
uri |
http://data.open.ac.uk/oro/document/281501 |
| 41857 |
uri |
http://data.open.ac.uk/oro/document/281793 |
| 41857 |
volume |
9154 |
| 41857 |
type |
AcademicArticle |
| 41857 |
type |
Article |
| 41857 |
label |
Weatherill, Daniel P. ; Stefanov, Konstantin D. ; Greig, Thomas A. and Holland, Andrew
D. (2014). Modelling and testing the x-ray performance of CCD and CMOS APS detectors
using numerical finite element simulations. In: SPIE Proceedings, 9154, article
no. 91541A. |
| 41857 |
label |
Weatherill, Daniel P. ; Stefanov, Konstantin D. ; Greig, Thomas A. and Holland,
Andrew D. (2014). Modelling and testing the x-ray performance of CCD and CMOS APS
detectors using numerical finite element simulations. In: SPIE Proceedings, 9154,
article no. 91541A. |
| 41857 |
Title |
Modelling and testing the x-ray performance of CCD and CMOS APS detectors using numerical
finite element simulations |
| 41857 |
in dataset |
oro |