| 39056 |
Creator |
e4a5ce7f5a3d131eba01f5aeb1bfb354 |
| 39056 |
Creator |
75e58e2420d20904d316b771635de983 |
| 39056 |
Creator |
ext-c9b567742663cc78c445f7fa03d549e1 |
| 39056 |
Creator |
ext-07db5e4f0975415af9a9ea36168119e2 |
| 39056 |
Creator |
ext-e680a77888cbffb9dfe0cafbb4ee1d1e |
| 39056 |
Date |
2013-09-26 |
| 39056 |
Is Part Of |
repository |
| 39056 |
abstract |
Buried channel (BC) MOSFETs are known to have better noise performance than surface
channel (SC) MOSFETs when used as source followers in modern Charge Coupled Devices
(CCD). CMOS image sensors find increasing range of applications and compete with CCDs
in high performance imaging, however BC transistors are rarely used in CMOS. As a
part of the development of charge storage using BC CCDs in CMOS, we designed and manufactured
deep depletion BC n-type MOSFETs in 0.18 μm CMOS image sensor process. The transistors
are designed in a way similar to the source followers in a typical BC CCD. In this
paper we report the results from their characterization and compare with enhancement
mode and “zero-threshold” SC devices. In addition to the detailed current-voltage
and noise measurements, semiconductor device simulation results are presented to illustrate
and understand the different conditions affecting the channel conduction and the noise
performance of the BC transistors at low operating voltages. We show that the biasing
of the BC transistors has to be carefully adjusted for optimal operation, and that
their noise performance at the right operating conditions can be superior to SC devices,
despite their lower gain as in-pixel source followers. |
| 39056 |
authorList |
authors |
| 39056 |
presentedAt |
ext-783fa64af1da46e6153399b961d1c738 |
| 39056 |
status |
nonPeerReviewed |
| 39056 |
uri |
http://data.open.ac.uk/oro/document/204256 |
| 39056 |
uri |
http://data.open.ac.uk/oro/document/204257 |
| 39056 |
uri |
http://data.open.ac.uk/oro/document/204258 |
| 39056 |
uri |
http://data.open.ac.uk/oro/document/204259 |
| 39056 |
uri |
http://data.open.ac.uk/oro/document/204260 |
| 39056 |
uri |
http://data.open.ac.uk/oro/document/204261 |
| 39056 |
uri |
http://data.open.ac.uk/oro/document/204722 |
| 39056 |
volume |
8859 |
| 39056 |
type |
AcademicArticle |
| 39056 |
type |
Article |
| 39056 |
label |
Stefanov, Konstantin D. ; Zhang, Zhige; Damerell, Chris; Burt, David and Kar-Roy,
Arjun (2013). Performance of buried channel n-type MOSFETs in 0.18-μm CMOS image
sensor process. In: UV, X-Ray, and Gamma-Ray Space Instrumentation for Astronomy
XVIII, SPIE, article no. 8859-17. |
| 39056 |
label |
Stefanov, Konstantin D. ; Zhang, Zhige; Damerell, Chris; Burt, David and Kar-Roy,
Arjun (2013). Performance of buried channel n-type MOSFETs in 0.18-μm CMOS image
sensor process. In: UV, X-Ray, and Gamma-Ray Space Instrumentation for Astronomy
XVIII, SPIE, article no. 8859-17. |
| 39056 |
sameAs |
12.2024192 |
| 39056 |
Publisher |
ext-63202a90972ed017e24f2aa6c44e52ad |
| 39056 |
Title |
Performance of buried channel n-type MOSFETs in 0.18-μm CMOS image sensor process |
| 39056 |
in dataset |
oro |