subject predicate object context
36856 Creator 3d9f5a6838060f791e133fa6e5265b06
36856 Creator ext-6987ccbbbde10cf467c29f8ad898d360
36856 Creator ext-210996de8c31ececcf62308a1217463f
36856 Creator ext-4df9517c5e835602abbf360e994e5369
36856 Creator ext-6ffbbe9f755445127f939ef188774ffe
36856 Creator ext-89bc6dfb7bdfe60fea5c200d2cbfbd67
36856 Creator ext-8bd66d77892913cfb86ddb48df3bd9ba
36856 Creator ext-df7291e991fce9398ce1161d15bf8324
36856 Date 2009-03-04
36856 Is Part Of p09538984
36856 Is Part Of repository
36856 abstract Resonant inelastic x-ray scattering (RIXS), x-ray absorption spectroscopy and x-ray excited optical luminescence (XEOL) have been used to measure element specific filled and empty electronic states over the Si L<sub>2,3</sub> edge of passivated Si nanocrystals of narrow size distribution (diameter 2.2 ± 0.4 nm). These techniques have been employed to directly measure absorption and luminescence specific to the local Si nanocrystal core. Profound changes occur in the absorption spectrum of the nanocrystals compared with bulk Si, and new features are observed in the nanocrystal RIXS. Clear signatures of core and valence band exciton formation, promoted by the spatial confinement of electrons and holes within the nanocrystals, are observed, together with band narrowing due to quantum confinement. XEOL at 12 K shows an extremely sharp feature at the threshold of orange luminescence (i.e., at ∼1.56 eV (792 nm)) which we attribute to recombination of valence excitons, providing a lower limit to the nanocrystal band gap.
36856 authorList authors
36856 issue 9
36856 status peerReviewed
36856 uri http://data.open.ac.uk/oro/document/138765
36856 uri http://data.open.ac.uk/oro/document/138770
36856 uri http://data.open.ac.uk/oro/document/138771
36856 uri http://data.open.ac.uk/oro/document/138772
36856 uri http://data.open.ac.uk/oro/document/138773
36856 uri http://data.open.ac.uk/oro/document/138774
36856 uri http://data.open.ac.uk/oro/document/138824
36856 volume 21
36856 type AcademicArticle
36856 type Article
36856 label Šiller, L.; Krishnamurthy, S. ; Kjeldgaard, L.; Horrocks, B. R; Chao, Y.; Houlton, A.; Chakraborty, A. K. and Hunt, M. R. C (2009). Core and valence exciton formation in x-ray absorption, x-ray emission and x-ray excited optical luminescence from passivated Si nanocrystals at the Si L2,3 edge. Journal of Physics: Condensed Matter, 21(9), article no. 095005.
36856 label Šiller, L.; Krishnamurthy, S. ; Kjeldgaard, L.; Horrocks, B. R; Chao, Y.; Houlton, A.; Chakraborty, A. K. and Hunt, M. R. C (2009). Core and valence exciton formation in x-ray absorption, x-ray emission and x-ray excited optical luminescence from passivated Si nanocrystals at the Si L2,3 edge. Journal of Physics: Condensed Matter, 21(9), article no. 095005.
36856 Title Core and valence exciton formation in x-ray absorption, x-ray emission and x-ray excited optical luminescence from passivated Si nanocrystals at the Si L<sub>2,3</sub> edge
36856 in dataset oro