36856 |
Creator |
3d9f5a6838060f791e133fa6e5265b06 |
36856 |
Creator |
ext-6987ccbbbde10cf467c29f8ad898d360 |
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Creator |
ext-210996de8c31ececcf62308a1217463f |
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Creator |
ext-4df9517c5e835602abbf360e994e5369 |
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Creator |
ext-6ffbbe9f755445127f939ef188774ffe |
36856 |
Creator |
ext-89bc6dfb7bdfe60fea5c200d2cbfbd67 |
36856 |
Creator |
ext-8bd66d77892913cfb86ddb48df3bd9ba |
36856 |
Creator |
ext-df7291e991fce9398ce1161d15bf8324 |
36856 |
Date |
2009-03-04 |
36856 |
Is Part Of |
p09538984 |
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Is Part Of |
repository |
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abstract |
Resonant inelastic x-ray scattering (RIXS), x-ray absorption spectroscopy and x-ray
excited optical luminescence (XEOL) have been used to measure element specific filled
and empty electronic states over the Si L<sub>2,3</sub> edge of passivated Si nanocrystals
of narrow size distribution (diameter 2.2 ± 0.4 nm). These techniques have been employed
to directly measure absorption and luminescence specific to the local Si nanocrystal
core. Profound changes occur in the absorption spectrum of the nanocrystals compared
with bulk Si, and new features are observed in the nanocrystal RIXS. Clear signatures
of core and valence band exciton formation, promoted by the spatial confinement of
electrons and holes within the nanocrystals, are observed, together with band narrowing
due to quantum confinement. XEOL at 12 K shows an extremely sharp feature at the threshold
of orange luminescence (i.e., at ∼1.56 eV (792 nm)) which we attribute to recombination
of valence excitons, providing a lower limit to the nanocrystal band gap. |
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authorList |
authors |
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issue |
9 |
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status |
peerReviewed |
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uri |
http://data.open.ac.uk/oro/document/138765 |
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uri |
http://data.open.ac.uk/oro/document/138770 |
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uri |
http://data.open.ac.uk/oro/document/138771 |
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uri |
http://data.open.ac.uk/oro/document/138772 |
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uri |
http://data.open.ac.uk/oro/document/138773 |
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uri |
http://data.open.ac.uk/oro/document/138774 |
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uri |
http://data.open.ac.uk/oro/document/138824 |
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volume |
21 |
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type |
AcademicArticle |
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type |
Article |
36856 |
label |
Šiller, L.; Krishnamurthy, S. ; Kjeldgaard, L.; Horrocks, B. R; Chao, Y.; Houlton,
A.; Chakraborty, A. K. and Hunt, M. R. C (2009). Core and valence exciton formation
in x-ray absorption, x-ray emission and x-ray excited optical luminescence from passivated
Si nanocrystals at the Si L2,3 edge. Journal of Physics: Condensed Matter, 21(9),
article no. 095005. |
36856 |
label |
Šiller, L.; Krishnamurthy, S. ; Kjeldgaard, L.; Horrocks, B. R; Chao, Y.; Houlton,
A.; Chakraborty, A. K. and Hunt, M. R. C (2009). Core and valence exciton formation
in x-ray absorption, x-ray emission and x-ray excited optical luminescence from passivated
Si nanocrystals at the Si L2,3 edge. Journal of Physics: Condensed Matter, 21(9),
article no. 095005. |
36856 |
Title |
Core and valence exciton formation in x-ray absorption, x-ray emission and x-ray excited
optical luminescence from passivated Si nanocrystals at the Si L<sub>2,3</sub> edge |
36856 |
in dataset |
oro |