Dynamic random-access memory

Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal-oxide-semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor, some only use two transistors. In the designs where a capacitor is used, the capacitor can either be charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1. The electric charge on the capacitors gradually leaks away; without intervention the data on the capacitor would soon be lost. To prevent this, DRAM requires an external memory refresh circuit which periodically rewrites the data in the capa

• Ability105616246
• Abstraction100002137
• Artifact100021939
• Circuit103033362
• Cognition100023271
• company
• ComputerCircuit103084420
• Creativity105624700
• Device103183080
• ElectricalDevice103269401
• Instrumentality103575240
• IntegratedCircuit103577090
• Invention105633385
• Object100002684
• PhysicalEntity100001930
• PsychologicalFeature100023100
• Thing
• Whole100003553
• WikicatAmericanInventions
• WikicatIntegratedCircuits